Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

Book chapter (2016)

Authors

V. Mohammadi Electronic Instrumentation - EEMCS
S. Nihtianova Electronic Instrumentation - EEMCS
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2016 V. Mohammadi, S. Nihtianova
DOI: https://doi.org/10.5772/63344
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Published Date

2016

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes with electronic interface circuits and other sensors on a single chip. In this way, smart‐sensor systems or even charge‐coupled device (CCD) or complementary metal oxide semiconductor (CMOS) ultraviolet (UV) imagers can be realised.