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De Lange, G. (author), Jackson, B.D. (author), Jochemsen, M. (author), Laauwen, W.M. (author), De Jong, L. (author), Kroug, M. (author), Zijlstra, T. (author), Klapwijk, T.M. (author)We describe the performance of the Band 3 and Band 4 Flight Model mixer units for Herschel/HIFI Instrument. These units are part of the Focal Plane Unit of HIFI. The band 3 and 4 mixer units cover the 800-960 GHz and 960-1120 GHz frequency range and have a 4-8 GHz IF frequency band. The sensitivities of the mixers within the HIFI setting are...conference paper 2006
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- Keizer, R.S. (author), Flokstra, M.G. (author), Aarts, J. (author), Klapwijk, T.M. (author) journal article 2006
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- Shashkin, A.A. (author), Anissimova, S. (author), Sakr, M.R. (author), Kravchenko, S.V. (author), Dolgopolov, V.T. (author), Klapwijk, T.M. (author) journal article 2006
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- Shashkin, A.A. (author), Deviatov, E.V. (author), Dolgopolov, V.T. (author), Kapustin, A.A. (author), Anissimova, S. (author), Venkatesan, A. (author), Kravchenko, S.V. (author), Klapwijk, T.M. (author) journal article 2006
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- Orlova, E.E. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Kasalynas, I. (author), Adam, A.J.L. (author), Gao, J.R. (author), Klapwijk, T.M. (author), Williams, B.S. (author), Kumar, S. (author), Hu, Q. (author), Reno, J.L. (author) journal article 2006
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- Anissimova, S. (author), Venkatesan, A. (author), Shashkin, A.A. (author), Sakr, M.R. (author), Kravchenko, S.V. (author), Klapwijk, T.M. (author) journal article 2006
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Barends, R. (author), Hajenius, M. (author), Gao, J.R. (author), Klapwijk, T.M. (author)We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both...journal article 2005
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- Craciun, M.F. (author), Rogge, S. (author), Klapwijk, T.M. (author), Morpurgo, A. (author) patent 2005
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Gao, J.R. (author), Hovenier, J.N. (author), Yang, Z.Q. (author), Baselmans, J.J.A. (author), Baryshev, A. (author), Hajenius, M. (author), Klapwijk, T.M. (author), Adam, A.J.L. (author), Klaassen, T.O. (author), Williams, B.S. (author), Kumar, S. (author), Hu, Q. (author), Reno, J.L. (author)We report the first demonstration of an all solid-state heterodyne receiver that can be used for high-resolution spectroscopy above 2?THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8?THz as local oscillator. We measure a double...journal article 2005
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Jackson, B.D. (author), De Lange, G. (author), Zijlstra, T. (author), Kroug, M. (author), Klapwijk, T.M. (author), Stern, J.A. (author)Integrating NbTiN-based microstrip tuning circuits with traditional Nb superconductor-insulator-superconductor (SIS) junctions enables the low-noise operation regime of SIS mixers to be extended from below 0.7?to?1.15?THz. In particular, mixers incorporating a NbTiN/SiO2/NbTiN microstrip tuning circuit offer low-noise performance below 0.8–0.85...journal article 2005
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Baselmans, J.J.A. (author), Baryshev, A. (author), Reker, S.F. (author), Hajenius, M. (author), Gao, J.R. (author), Klapwijk, T.M. (author), Vachtomin, Y. (author), Maslennikov, S. (author), Antipov, S. (author), Voronov, B. (author), Gol'tsman, G. (author)We measure the direct detection effect in a small volume (0.15??m×1??m×3.5?nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 1.6?THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when...journal article 2005
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De Boer, R.W.I. (author), Iosad, N.N. (author), Stassen, A.F. (author), Klapwijk, T.M. (author), Morpurgo, A.F. (author)We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single...journal article 2005
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- Tsui, Y. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author) journal article 2005
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- Goennenwein, S.T.B. (author), Russo, S. (author), Morpurgo, A.F. (author), Klapwijk, T.M. (author), van Roy, W. (author), de Boeck, J. (author) journal article 2005
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- Tsui, Y. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author) journal article 2005
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- Meijer, F.E. (author), Morpurgo, A.F. (author), Klapwijk, T.M. (author), Nitta, J. (author) journal article 2005
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- Russo, S. (author), Kroug, M. (author), Klapwijk, T.M. (author), Morpugo, A.F. (author) journal article 2005
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Baselmans, J. (author), Hajenius, M. (author), Gao, J. (author), De Korte, P. (author), Klapwijk, T. (author), Voronov, B. (author), Gol'tsman, G. (author)NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between...conference paper 2004
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Klapwijk, T.M. (author), Barends, R. (author), Gao, J.R. (author), Hajenius, M. (author), Baselmans, J.J.A. (author)Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical...conference paper 2004
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Jaroszynski, J. (author), Popovic, D. (author), Klapwijk, T.M. (author)Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both the glass transition density ng and nc, the critical density for the MIT, increase with B such that...conference paper 2004