Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

Conductive TiN shells have been deposited on SiO2 nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of powder. TEM and XPS analysis showed that all...

Resonant optical absorption and defect control in Ta3N5 photoanodes

In this study, we explore resonance-enhanced optical absorption in Ta3N5 photoanodes for water splitting. By using a reflecting Pt back-contact and appropriate Ta3N5 film thickness, the resonance frequency can be tuned to energies just above the bandgap, where the optical absorption is normally weak. The resonance results in a significant...

Performance Limiting Factors in Co-Pi Catalyzed, Spray-Deposited BiVO4 Photoanodes (abstract)

Titanium nitride: A new Ohmic contact material for n-type CdS

In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath deposition, have a hexagonal crystal structure and...

Influence of point defects on the performance of InVO4 photoanodes

The properties of thin film InVO4 photoanodes for water splitting have been studied. Compact films of InVO4 were prepared by spray pyrolysis and are found to be stable between pH 3 and 11. Although the indirect bandgap is 3.2 eV, a modest amount of visible light absorption is observed. The origin of this absorption is attributed to the presence...

Influence of point defects on the performance of InVO4 photoanodes

The properties of thin film InVO4 photoanodes for water splitting have been studied. Compact films of InVO4 were prepared by spray pyrolysis and are found to be stable between pH 3 – 11. Although the indirect bandgap is 3.2 eV, a modest amount of visible light absorption is observed. The origin of this absorption is attributed to the presence of...

Defect Properties and Photoelectrochemical Performance of BiVO4 Photoanodes

Enhanced photoluminescence at poly(3-octyl-thiophene)/TiO2 interfaces

The photoluminescence (PL) of poly(3-octyl-thiophene) (P3OT) thin films applied on TiO2 substrates is compared to the PL of P3OT films applied on quartz. Quenching of excitons occurs at the P3OT/TiO2 interface and not at the P3OT/quartz interface. Yet, in the former case the PL intensity is stronger than in the latter. In particular, P3OT films...

Mott-Schottky analysis of nanometer-scale thin-film anatase TiO2

Spectroscopic investigation of lithium intercalation in thin films of anatase titanium dioxide