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Announcing TU Delft Repository replacement
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2 July 2024
TU Delft Repository will be replaced with a fresh user friendly design with monthly new feature releases.
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Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes
A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device
A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector
Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range
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