Fabrication of Nanoslits with <111> Etching TSWE Method

In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by &lt;111&gt; crystal plane etching. The etching rate of the &lt;111&gt; crystal plane is reasonably slow as it is only 1/45 of the &lt;100&gt; etching rate, thus allowing and...

A high responsivity and controllable recovery ultraviolet detector based on a WO₃gate AlGaN/GaN heterostructure with an integrated micro-heater

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO₃) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO₃nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...