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Rectification in Ionic Field Effect Transistors Based on Single Crystal Silicon Nanopore
Correction: Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method (Microsystems & Nanoengineering, (2023), 9, 1, (63), 10.1038/s41378-023-00532-0)
Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method
Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique
A high responsivity and controllable recovery ultraviolet detector based on a WO
3
gate AlGaN/GaN heterostructure with an integrated micro-heater
Low power AlGaN/GaN MEMS pressure sensor for high vacuum application
Suspended AlGaN/GaN HEMT NO
2
Gas Sensor Integrated with Micro-heater
Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating
Suspended tungsten trioxide (WO
3
) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater
Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater
A silicon MEMS structure for characterization of femto-farad-level capacitive sensors with lock-in architecture
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