Investigation of coherent Fourier scatterometry as a calibration tool for determination of steep side wall angle and height of a nanostructure

Nanostructures with steep side wall angles (swa) play a pivotal role in various technological applications. Accurate characterization of these nanostructures is crucial for optimizing their performance. In this study, we propose a far-field detection method based on coherent Fourier scatterometry (CFS) for accurate quantification of steep swa...

Optical and tactile measurements on SiC sample defects

In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC...

Coherent Fourier Scatterometry for Detection of Killer Defects on Silicon Carbide Samples

It has been a widely growing interest in using silicon carbide (SiC) in high-power electronic devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and make the device fall into unexpected failures. To prevent these failures from happening, it is very important to develop inspection tools that can detect,...