Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

A comparison between PECVD and ALD for the fabrication of slot waveguide based sensors

We fabricated horizontal slot waveguides using two low temperature deposition techniques ensuring the full compatibility of the processes with CMOS technology. Slots width as thin as 45 nm with smooth slot surfaces can easily be fabricated with simple photolithographic steps. Fundamental TM-like slot mode in which the E-field is greatly enhanced...

Demonstration of PECVD SiC thermal delay lines for optical coherence tomography in the visible

Optical Coherence Tomography (OCT) has found applications in many fields of medicine and has a large potential for the optical biopsy of tumors. One of the technological challenges impairing faster adoption of OCT is the relative complexity of the optical instrumentation required, which translates into expensive and bulky setups. In this paper...