Searched for: +
(1 - 4 of 4)
document
Mao, Pengcheng (author), Fan, Huilin (author), Liu, Chang (author), Lan, Gongxu (author), Huang, Wei (author), Li, Zhipeng (author), Amin Hassan, H.M. (author), Zheng, Runguo (author), Wang, Zhiyuan (author), Sun, Hongyu (author), Liu, Yanguo (author)
Thanks to the low cost and earth's abundant potassium resources, potassium ion batteries (PIBs) have attracted much interest as alternative energy storage devices. However, there is still a great challenge to develop suitable anode materials for PIBs with high specific capacity, fast charge/discharge and stable ion storage. Nowadays,...
journal article 2022
document
Pang, Min (author), Sun, Zhenping (author), Ji, Yanliang (author), Yang, Jingbin (author), Wang, Peiming (author), Xu, Yaling (author), Li, Huanhuan (author), Liu, Jiaying (author), Li, Fei (author)
Characteristics of fly ash(FA) blended mortars (50%, 70% and 90%) at different curing ages (28 days and 180 days) under ammonium chloride solution(ACS) leaching were investigated. Mass loss under leaching, initial CaO content, Ca(OH)2 content(CH), content of chemical bonded water, and hydration degree of blended pastes were tested by XRF and DSC...
conference paper 2021
document
Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Wei, Ke (author), Li, Pengfei (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...
journal article 2020
document
Sun, J. (author), Zhang, Shuo (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Li, Jinmin (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO<sub>3</sub>) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO<sub>3</sub>nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...
journal article 2020
Searched for: +
(1 - 4 of 4)