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Fieback, M. (author), Cardoso Medeiros, G. (author), Wu, L. (author), Aziza, Hassen (author), Bishnoi, R.K. (author), Taouil, M. (author), Hamdioui, S. (author)
Resistive RAM (RRAM) is a promising technology to replace traditional technologies such as Flash, because of its low energy consumption, CMOS compatibility, and high density. Many companies are prototyping this technology to validate its potential. Bringing this technology to the market requires high-quality tests to ensure customer...
journal article 2022
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Cardoso Medeiros, G. (author), Fieback, M. (author), Wu, L. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)
Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field...
journal article 2021
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Cardoso Medeiros, G. (author), Fieback, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)
STT-MRAM mass production is around the corner as major foundries worldwide invest heavily on its commercialization. To ensure high-quality STT-MRAM products, effective yet cost-efficient test solutions are of great importance. This article presents a systematic device-aware defect and fault modeling framework for STT-MRAM to derive accurate...
journal article 2019