Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations

This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a machine-learning model. An experiment was performed to validate the feasibility of the...

Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using...

Evaluation of short-term streamflow prediction methods in Urban river basins

Efficient and accurate streamflow predictions are important for urban water management. Data-driven models, especially neural network (NN) models can predict streamflow fast, while the results are uncertain in some complex river systems. Physically based models can reveal the underlying physics, but it is relatively slow and computationally...