Unraveling electron liberation from Bi²⁺ for designing Bi³⁺-based afterglow phosphor for anti-counterfeiting and flexible X-ray imaging

It is challenging to rational design persistent luminescence and storage phosphors with high storage capacity of electrons and holes after X-ray charging. Such phosphors have potential applications in anti-counterfeiting and X-ray imaging. Here we have combined vacuum referred binding energy diagram (VRBE) construction, photoluminescence...

Towards information storage by designing both electron and hole detrapping processes in bismuth and lanthanide-doped LiRE(Si,Ge)O₄ (RE = Y, Lu) with high charge carrier storage capacity

Guided by vacuum referred binding energy (VRBE) diagrams, both the trapping and detrapping processes of electrons and holes are explored in the bismuth and lanthanide-doped LiRE(Si,Ge)O₄ (RE = Y, Lu) family of compounds. The Tm³⁺ electron trap has been combined with the deep hole traps of Ln³⁺ (Ln = Ce, Tb, or...

Designing thermally stimulated 1.06 mu m Nd3+ emission for the second bio-imaging window demonstrated by energy transfer from Bi3+ in La-, Gd-, Y-, and LuPO4

We report a general methodology to the rational design of thermally stimulated short-wave infrared (SWIR) luminescence between ∼900 and 1700 nm by a new combination of using efficient energy transfer from Bi ³⁺ to Nd ³⁺ and an adjustable hole trap depth via valence band engineering. Predictions from a vacuum referred...