Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions

Metal-Semiconductor (M/S) heterojunctions, better known as Schottky junctions play a crucial role in modern electronics. At present, the mechanisms behind the M/S junctions are still a subject of discussion. In this work, we investigate the interfaces between semiconducting crystalline Si and amorphous metallic indium, Si{0 0 1}/a-In and Si{1...

Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)

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Mechanism of electronegativity heterojunction of nanometer amorphous-boron on crystalline silicon: An overview

The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by...

Stability, geometry and electronic properties of BH_n (n = 0 to 3) radicals on the Si{0 0 1}3 1:H surface from first-principles

A new generation of radiation detectors relies on the crystalline Si and amorphous B (c-Si/a-B) junctions that are prepared through chemical vapor deposition of diborane (B₂H₆) on Si at low temperature (∼400 C). The Si wafer surface is dominated by the Si{0 0 1}3 1 domains that consist of two different Si species at low...

A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer

The interest in nanostructures of silicon and its dopants has significantly increased. We report the creation of an ultimately-shallow junction at the surface of n-type silicon with excellent electrical and optical characteristics made by depositing an atomically thin boron layer at a relatively low temperature where no doping of silicon is...

Stability, local structure and electronic properties of borane radicals on the Si(100) 2x1:H surface: A first-principles study

Abstract Deposition of a thin B layer via decomposition of B2H6 on Si (PureB process) produces B-Si junctions which exhibit unique electronic and optical properties. Here we present the results of our systematic first-principles study of BHn (n=0-3) radicals on Si(100)2x1:H surfaces, the initial stage of the PureB process. The calculations...