An energy-efficient capacitively biased diode-based temperature sensor in 55-nm CMOS

This work presents an energy-efficient diode-based CMOS temperature sensor. It is based on the capacitively biased diode (CBD) working principle and can operate with a 1-V supply voltage. Instead of using a separate CBD front-end and ADC, a new architecture is proposed in which the CBD front-end is directly embedded into the 1st stage of a 1...

A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output....