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Wu, L. (author), Fieback, M. (author), Taouil, M. (author), Hamdioui, S. (author)
This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole...
conference paper 2020
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Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Wu, L. (author), Fieback, M. (author), Jenihhin, Maksim (author), Taouil, M. (author), Hamdioui, S. (author)
Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always cause incorrect behavior, and therefore are easily detected by applying sequences of write and read operations. However, hard-to-detect (HTD) faults may not cause incorrect behavior, only parametric deviations. Detection of these faults is of...
conference paper 2020
document
Fieback, M. (author), Wu, L. (author), Cardoso Medeiros, G. (author), Aziza, Hassen (author), Rao, S (author), Marinissen, Erik Jan (author), Taouil, M. (author), Hamdioui, S. (author)
This paper proposes a new test approach that goes beyond cell-aware test, i.e., device-aware test. The approach consists of three steps: defect modeling, fault modeling, and test/DfT development. The defect modeling does not assume that a defect in a device (or a cell) can be modeled electrically as a linear resistor (as the traditional approach...
conference paper 2019