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Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO<sub>3</sub>) nano-film modified gate for nitrogen dioxide (NO<sub>2</sub>) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the...journal article 2019
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Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Santagata, F. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working...journal article 2019
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Santagata, F. (author), Sun, J. (author), Iervolino, E. (author), Yu, H. (author), Wang, F. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author), Zhang, Guoyi (author)Purpose: The purpose of this paper is to demonstrate a novel 3D system-in-package (SiP) approach. This new packaging approach is based on stacked silicon submount technology. As demonstrators, a smart lighting module and a sensor systems were successfully developed by using the fabrication and assembly process described in this paper. Design...journal article 2018
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Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet EtchingSokolovskij, R. (author), Sun, J. (author), Santagata, F. (author), Iervolino, E. (author), Li, S. (author), Zhang, G.Y. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O<sub>2</sub> plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...journal article 2016