Tosato, A. (author), Ferrari, B.M. (author), Sammak, A. (author), Hamilton, Alexander R. (author), Veldhorst, M. (author), Virgilio, Michele (author), Scappucci, G. (author) A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of ...
journal article 2022
