Li, J. (author), Vollebregt, S. (author), Zhang, Y. (author), Shekhar, A. (author), May, Alexander (author), van Driel, W.D. (author), Zhang, Kouchi (author) Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide...
conference paper 2024