Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

Two different charge carrier trapping processes have been investigated in RE2O2S:Ln3+ (RE = La, Gd, Y, and Lu; Ln = Ce, Pr, and Tb) and RE2O2S:M (M = Ti4+ and Eu3+). Cerium, praseodymium and terbium act as recombination centers and hole trapping centers while host intrinsic defects provide the electron trap. The captured electrons released from...

Electronic structure and site occupancy of lanthanide-doped (Sr, ca)₃(Y, lu)₂Ge₃O₁₂ garnets: A spectroscopic and first-principles study

Photoluminescence excitation (PLE) and emission spectra (PL) of undoped (Sr, Ca)₃(Y, Lu)₂Ge₃O₁₂ as well as Eu³⁺- and Ce³⁺-doped samples have been investigated. The PL spectra show that Eu³⁺ enters into both dodecahedral (Ca, Sr) and octahedral (Y, Lu) sites. Ce<sup>3...