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Wu, Lizhou (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named...journal article 2022
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)The manufacturing process of STT-MRAM requires unique steps to fabricate and integrate magnetic tunnel junction (MTJ) devices which are data-storing elements. Thus, understanding the defects in MTJs and their faulty behaviors are paramount for developing high-quality test solutions. This article applies the advanced device-aware test to...journal article 2022
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Cardoso Medeiros, G. (author), Fieback, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)STT-MRAM mass production is around the corner as major foundries worldwide invest heavily on its commercialization. To ensure high-quality STT-MRAM products, effective yet cost-efficient test solutions are of great importance. This article presents a systematic device-aware defect and fault modeling framework for STT-MRAM to derive accurate...journal article 2019