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Ishihara, R. (author), Trifunovic, M. (author), Van der Zwan, M. (author)A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by exposing said first (poly)silane layer to UV...patent 2016
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Ishihara, R. (author), Trifunovic, M. (author), Van der Zwan, M. (author)A method for forming a silicon layer using a liquid silane compound is described wherein said method comprises the steps of forming a first layer on a substrate, preferably a flexible substrate, said first layer comprising a (poly)silane; and, irradiating said first light ight comprising one or more wavelength within the range between 200 and...patent 2014
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Ishihara, R. (author), Van de Zwan, M. (author), Trifunovic, M. (author)Methods for manufacture of a submicron semiconductor structure on a substrate are described. The method may comprise: forming at least one template layer over a support substrate; forming one or more template structures, preferably one or more recesses and/or mesas, in said template layer, said one or more template structures comprising one or...patent 2014
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Ishihara, R. (author), Van der Zwan, M. (author)A method for the manufacture of at least part of a thin-film device is described wherein, said method comprise: forming one or more indentations in a substrate, preferably a plastic substrate, an indentation comprising sidewalls and a base; filling at least one of said one or more indentations with a first ink, said first ink comprising a first...patent 2013
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Ishihara, R. (author), Baiano, A. (author)The invention relates to a method for manufacturing a semiconductor device on a substrate provided with a silicon-oxide layer, by forming at least one hole in said silicon-oxide layer and depositing on said silicon-oxide layer an amorphous silicon-film which fills said at least one hole and covers a surrounding area of said hole, wherein said...patent 2009