Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author) We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...
journal article 2015