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Ghasemi, Foad (author), Frisenda, Riccardo (author), Flores, Eduardo (author), Papadopoulos, N. (author), Biele, Robert (author), de Lara, David Perez (author), van der Zant, H.S.J. (author), Watanabe, Kenji (author), Castellanos-Gomez, Andres (author)In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled...journal article 2020
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Papadopoulos, N. (author), Flores, Eduardo (author), Watanabe, Kenji (author), Taniguchi, Takashi (author), Ares, Jose R. (author), Sanchez, Carlos (author), Ferrer, Isabel J. (author), Castellanos-Gomez, Andres (author), Steele, G.A. (author), van der Zant, H.S.J. (author)We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS<sub>3</sub>) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in...journal article 2019
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Papadopoulos, N. (author), Frisenda, Riccardo (author), Biele, Robert (author), Flores, Eduardo (author), Ares, Jose R. (author), Sánchez, Carlos (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), D'Agosta, Roberto (author), Castellanos-Gomez, Andres (author)TiS<sub>3</sub> nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS<sub>3</sub> is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study...journal article 2018