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Aziza, H. (author), Postel-Pellerin, J. (author), Fieback, M. (author), Hamdioui, S. (author), Xun, H. (author), Taouil, M. (author), Coulie, K. (author), Rahajandraibe, W. (author)
While Resistive RRAM (RRAM) offers attractive features for artificial neural networks (NN) such as low power operation and high-density, its conductance variation can pose significant challenges when the storage of synaptic weights is concerned. This paper reports an experimental evaluation of the conductance variations of manufactured RRAMs...
conference paper 2024
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Xun, H. (author), Fieback, M. (author), Yuan, S. (author), Zhang, Ziwei (author), Taouil, M. (author), Hamdioui, S. (author)
Resistive Random Access Memory (RRAM) is a potential technology to replace conventional memories by providing low power consumption and high-density storage. As various manufacturing vendors make significant efforts to push it to high-volume production and commercialization, high-quality and efficient test solutions are of great importance. This...
conference paper 2023
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Fieback, M. (author), Bradarić, Filip (author), Taouil, M. (author), Hamdioui, S. (author)
Resistive Random Access Memory (RRAM, or ReRAM) is a promising memory technology to replace Flash because of its low power consumption, high storage density, and simple integration in existing IC production processes. This has motivated many companies to invest in this technology. However, RRAM manufacturing introduces new failure mechanisms and...
conference paper 2023
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Aziza, Hassen (author), Zambelli, Cristian (author), Hamdioui, S. (author), Diware, S.S. (author), Bishnoi, R.K. (author), Gebregiorgis, A.B. (author)
Emerging device technologies such as Resistive RAMs (RRAMs) are under investigation by many researchers and semiconductor companies; not only to realize e.g., embedded non-volatile memories, but also to enable energy-efficient computing making use of new data processing paradigms such as computation-in-memory. However, such devices suffer from...
conference paper 2023
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El Arrassi, A.E. (author), Gebregiorgis, A.B. (author), Haddadi, Anass El (author), Hamdioui, S. (author)
Spiking Neural Networks (SNNs) can drastically improve the energy efficiency of neuromorphic computing through network sparsity and event-driven execution. Thus, SNNs have the potential to support practical cognitive tasks on resource constrained platforms, such as edge devices. To realize this, SNN requires energy-efficient hardware which can...
conference paper 2022
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Fieback, M. (author), Münch, Christopher (author), Gebregiorgis, A.B. (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Tahoori, Mehdi (author)
Emerging non-volatile resistive memories like Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) and Resistive RAM (RRAM) are in the focus of today’s research. They offer promising alternative computing architectures such as computation-in-memory (CiM) to reduce the transfer overhead between CPU and memory, usually referred to as the...
conference paper 2022
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Fieback, M. (author), Taouil, M. (author), Hamdioui, S. (author)
Testing of Computation-in-Memory (CIM) designs based on emerging non-volatile memory technologies, such as resistive RAM (RRAM), is fundamentally different from testing traditional memories. Such designs allow not only for data storage (i.e., memory configuration) but also for the execution of logical and arithmetic operations (i.e., computing...
conference paper 2022
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Gebregiorgis, A.B. (author), Zografou, Artemis (author), Hamdioui, S. (author)
Computation-In Memory (CIM) using RRAM crossbar array is a promising solution to realize energy-efficient neuromorphic hardware, such as Binary Neural Networks (BNNs). However, RRAM faults restrict the applicability of CIM for BNN implementation. To address this issue, we propose a fault tolerance framework to mitigate the impact of RRAM faults...
conference paper 2022
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Pouyan, P. (author), Amat, Esteve (author), Hamdioui, S. (author), Rubio, Antonio (author)
Emerging technologies such as RRAMs are attracting significant attention, due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures (such as process variation due to their nano-scale structure) have...
conference paper 2016
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