First demonstration of l-band high-power limiter with gan schottky barrier diodes (Sbds) based on steep-mesa technology

Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a...

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and...

Dual-action smart coatings with a self-healing superhydrophobic surface and anti-corrosion properties

This work introduces a new self-healing superhydrophobic coating based on dual actions by the corrosion inhibitor benzotriazole (BTA) and an epoxy-based shape memory polymer (SMP). Damage to the surface morphology (e.g., crushed areas and scratches) and the corresponding superhydrophobicity are shown to be rapidly healed through a simple heat...

Microstructure of bilayer manganite PrCa2Mn2O7 showing charge/orbital ordering

The microstructure of the charge/orbital ordering Ruddleden-Popper phase PrCa2Mn2O7 was studied by transmission electron microscopy along both the [001] and the [110] orientation. Three coexisting charge/orbital ordering phases CO1, CO2, and CO3 were observed along the [001] orientation at room temperature. Different from the one-dimensional...