Self-aligned micro-optic integrated photonic platform

In this work, we present the fabrication technology of a monolithically integrated photonic platform combining key components for optical coherence tomography (OCT) imaging, thereby including a photonic interferometer, a collimating lens, and a 45^◦ reflecting mirror that directs the light from the interferometer to the collimator....

A MEMS Actuator System for an Integrated 3-D Optical Coherent Tomography Scanner

In this paper, we present an electrothermal biaxial MEMS actuator system, which provides x-A nd y-direction scanning for a fully integrated 3-D optical coherence tomography (OCT) scanner. An angular scanning range of 8° (corresponding to a 7-mm linear scanning range in both directions) is achieved, with an average power consumption of 150 mW....

Effects of Conformal Nanoscale Coatings on Thermal Performance of Vertically Aligned Carbon Nanotubes

The high aspect ratio and the porous nature of spatially oriented forest-like carbon nanotube (CNT) structures represent a unique opportunity to engineer a novel class of nanoscale assemblies. By combining CNTs and conformal coatings, a 3D lightweight scaffold with tailored behavior can be achieved. The effect of nanoscale coatings, aluminum...

A highly miniturized single-chip MOEMS scanner for all-in-one imaging solution

A highly miniaturized, single-chip, large scanning range MOEMS scanner is demonstrated. This intrinsically-aligned, monolithically integrated device uses small angular displacement to provide a linear scanning range of 2000 μm in the lateral and 1000 μm in the vertical direction, at a working distance of 2 cm, with an average operating power...

Integrated SiGe Detectors for Si Photonic Sensor Platforms

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range...

Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement...