Titanium trisulfide (TiS3): A 2D semiconductor with quasi-1D optical and electronic properties

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on...

High Current Density Electrical Breakdown of TiS₃ Nanoribbon-Based Field-Effect Transistors

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...

Mechanically controlled quantum interference in graphene break junctions

The ability to detect and distinguish quantum interference signatures is important for both fundamental research and for the realization of devices such as electron resonators¹, interferometers² and interference-based spin filters³. Consistent with the principles of subwavelength optics, the wave nature of...

Spin signatures in the electrical response of graphene nanogaps

We analyse the electrical response of narrow graphene nanogaps in search for transport signatures stemming from spin-polarized edge states. We find that the electrical transport across graphene nanogaps having perfectly defined zigzag edges does not carry any spin-related signature. We also analyse the magnetic and electrical properties of...

Spin-state dependent conductance switching in single molecule-graphene junctions

Spin-crossover (SCO) molecules are versatile magnetic switches with applications in molecular electronics and spintronics. Downscaling devices to the single-molecule level remains, however, a challenging task since the switching mechanism in bulk is mediated by cooperative intermolecular interactions. Here, we report on electron transport...

Large birefringence and linear dichroism in TiS₃ nanosheets

TiS₃ nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS₃ is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study...

Multi-terminal electronic transport in boron nitride encapsulated TiS₃ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS₃) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in...

A Mechanically Tunable Quantum Dot in a Graphene Break Junction

Graphene quantum dots (QDs) are intensively studied as platforms for the next generation of quantum electronic devices. Fine tuning of the transport properties in monolayer graphene QDs, in particular with respect to the independent modulation of the tunnel barrier transparencies, remains challenging and is typically addressed using...

Raman Fingerprint of Pressure-Induced Phase Transitions in TiS₃Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of their robust mechanical and thermal properties and applications in opto- and nanoelectronics devices. We report the pressure dependence of out-of-plane Ag Raman modes in high quality few-layer titanium trisulfide ...

Spin-Crossover in Supramolecular Iron(II)-2,6-bis(1 H-Pyrazol-1-yl)pyridine Complexes: Toward Spin-State Switchable Single-Molecule Junctions

Spin-crossover (SCO) active iron(II) complexes are an integral class of switchable and bistable molecular materials. Spin-state switching properties of the SCO complexes have been studied in the bulk and single-molecule levels to progress toward fabricating molecule-based switching and memory elements. Supramolecular SCO complexes featuring...

Titanium Trisulfide Nanosheets and Nanoribbons for Field Emission-Based Nanodevices

The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of ∼0.3 V/μm, required for drawing an emission current density of ∼10 μA/cm2. Interestingly, the TiS3 nanosheet emitter delivered a...