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Tran, A.T. (author), Pandraud, G. (author), Schellevis, H. (author), Sarro, P.M. (author)Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection for 200 ?m long cantilevers, at quasi-static mode, is obtained for a 500 nm SiN top layer. This value is three times larger...journal article 2012
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Tran, A.T. (author), Pandraud, G. (author), Schellevis, H. (author), Alan, T. (author), Aravindh, V. (author), Wunnicke, O. (author), Sarro, P.M. (author)Very thin piezoelectric cantilevers based on AlN layers using titanium Ti thin film electrodes are fabricated and characterized. By optimizing the Ti sputtering parameters, a very low stress (156 MPa) layers stack with high crystallinity and strong (002) orientation of the AlN films is obtained. Finally, a simple fabrication process, fully CMOS...journal article 2011
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Tran, A.T. (author), Schellevis, H. (author), Pham, H.T.M. (author), Shen, C. (author), Sarro, P.M. (author)Aluminum Nitride thin films with the desired properties for piezoelectric actuators are grown by pulsed DC sputtering on Si (100) substrates coated with different seed layers (Al/1%Si, Mo, Ti). The influence of sputtering parameters and the seed layers on crystallinity and orientation of the AlN films is investigated. Raman spectroscopy...journal article 2010