High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

Broadband transparent conductive oxide layers with high electron mobility (μ_e) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In₂O₃ thin films with high μ_e (>60 cm² V^-1 s^-1) have been extensively...

Mechanical cleaning of graphene

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly...

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area ...

Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active...

Mobility-based Time References for Wireless Sensor Networks

Wireless Sensor Networks require small low-cost radios to enable communication among its nodes. Since those radios must be fully integrated to reduce cost and size, integration is required also for their on-board time references, which are needed to achieve synchronization with the other nodes. To deal with the lower accuracy of integrated...

High Quality SiO2 Deposited at 80°C by Inductively Coupled Plasma Enhanced CVD for Flexible Display Application

In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...

Time-of-flight studies on TiO2/CuInS2 heterojunctions

Time-of-Flight (TOF) measurements have been performed on n-type TiO2/p-type CuInS2 heterojunctions. The TiO2 film thickness has been varied between 200 and 400 nm, while the CuInS2 film thickness has been fixed at 500 nm. The TOF response can be accurately modeled, if the potential drop across the p-n heterojunction with a large density of...

Cryogenic amplifier for fast real-time detection of single-electron tunneling

The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1?K and the circuit has a bandwidth of 1?MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than...

Influence of trap states on dynamic properties of single grain silicon thin film transistors

The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...

Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3?cm2/V?s in both materials. The highest...