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Bootsman, R.J. (author), Mul, D.P.N. (author), Shen, Y. (author), Hashemi, M. (author), Heeres, Rob M. (author), van Rijs, Fred (author), Alavi, S.M. (author), de Vreede, L.C.N. (author)
Fully digital transmitters (DTXs) have the potential of replacing analog-intensive transmitter (TX) line-ups in future massive multiple-input and multiple-output (mMIMO) systems since they hold the promise of higher system integration level and energy efficiency. DTX operation so far has been limited to low RF output powers. This article...
journal article 2022
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Padmanabhan, P. (author), Hancock, Bruce (author), Nikzad, Shouleh (author), Bell, L. Douglas (author), Kroep, Kees (author), Charbon-Iwasaki-Charbon, E. (author)
Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their...
journal article 2018
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Incandela, R.M. (author), Song, L (author), Homulle, Harald (author), Charbon-Iwasaki-Charbon, E. (author), Vladimirescu, A. (author), Sebastiano, F. (author)
Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact...
journal article 2018
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van Berkel, S.L. (author), Malotaux, E.S. (author), Cavallo, D. (author), Spirito, M. (author), Neto, A. (author), Llombart, Nuria (author)
The design and performance analysis are presented for a passive uncooled radiometer pixel suitable for integration in 28 nm CMOS technology. In the configuration a single wideband antenna, operating from 200 GHz to 600 GHz, is connected to a pn-junction diode. Including the antenna-detector impedance mismatch, the detector shows an average NEP...
conference paper 2017
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Wang, G. (author)
Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC(VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to fabricate high-precision bandgap references and...
doctoral thesis 2005
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