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Mazur, G.P. (author), van Loo, N. (author), Wang, J. (author), Dvir, T. (author), Wang, Guanzhong (author), Korneychuk, S. (author), Borsoi, F. (author), Dekker, R.C. (author), Badawy, G.H.A. (author), Vinke, Peter (author), Quintero Perez, M. (author), Heedt, S. (author), Kouwenhoven, Leo P. (author)In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. However, aluminum-based devices suffer from poor magnetic field compatibility. Herein, this limitation is resolved by showing that adatoms of heavy elements (e.g.,...journal article 2022
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de Moor, M.W.A. (author), Bommer, J.D.S. (author), Xu, D. (author), Winkler, Georg W. (author), Antipov, Andrey E. (author), Bargerbos, A. (author), Wang, Guanzhong (author), van Loo, N. (author), op het Veld, R.L.M. (author), Gazibegovic, S. (author), Car, D. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, Leo P. (author), Zhang, H. (author)We study the effect of external electric fields on superconductor-semiconductor coupling by measuring the electron transport in InSb semiconductor nanowires coupled to an epitaxially grown Al superconductor. We find that the gate voltage induced electric fields can greatly modify the coupling strength, which has consequences for the proximity...journal article 2018
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de Vries, F.K. (author), Shen, J. (author), Skolasinski, R.J. (author), Nowak, M.P. (author), Varjas, D. (author), Wang, L. (author), Wimmer, M.T. (author), Zwanenburg, F.A. (author), Li, A. (author), Kölling, S. (author), Verheijen, M.P.A.M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, Leo P. (author)Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted great interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the...journal article 2018
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Bulgarini, G. (author), Reimer, M.E. (author), Zehender, T. (author), Hocevar, M. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)Nanowire waveguides with controlled shape are promising for engineering the collection efficiency of quantum light sources. We investigate the exciton lifetime in individual InAsP quantum dots, perfectly positioned on-axis of InP nanowire waveguides. We demonstrate control over the quantum dot spontaneous emission by varying the nanowire...journal article 2012
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Van Kouwen, M.P. (author), Van Weert, M.H.M. (author), Reimer, M.E. (author), Akopian, N. (author), Perinetti, U. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the linear polarization direction of the incident light...journal article 2010
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Van Weert, M.H.M. (author), Den Heijer, M. (author), Van Kouwen, M.P. (author), Algra, R.E. (author), Bakkers, E.P.A.M. (author), Kouwenhoven, L.P. (author), Zwiller, V. (author)We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis,...journal article 2010
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Scheffler, M. (author), Nadj-Perge, S. (author), Kouwenhoven, L.P. (author), Borgström, M.T. (author), Bakkers, E.P.A.M. (author)Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within...journal article 2009
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De Franceschi, S. (author), Van Dam, J.A. (author), Bakkers, E.P.A.M. (author), Feiner, L.F. (author), Gurevich, L. (author), Kouwenhoven, P. (author)We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires...journal article 2003