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Poehls, L. M.Bolzani (author), Fieback, M. (author), Hoffmann-Eifert, S. (author), Copetti, T. (author), Brum, E. (author), Menzel, S. (author), Hamdioui, S. (author), Gemmeke, T. (author)
Complementary Metal Oxide Semiconductor (CMOS) technology has been scaled down over the last forty years making possible the design of high-performance applications, following the predictions made by Gordon Moore and Robert H. Dennard in the 1970s. However, there is a growing concern that device scaling, while maintaining cost-effective...
journal article 2021
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Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Wu, L. (author), Fieback, M. (author), Jenihhin, Maksim (author), Taouil, M. (author), Hamdioui, S. (author)
Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always cause incorrect behavior, and therefore are easily detected by applying sequences of write and read operations. However, hard-to-detect (HTD) faults may not cause incorrect behavior, only parametric deviations. Detection of these faults is of...
conference paper 2020
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Vatajelu, E.I. (author), Prinetto, Paolo (author), Taouil, M. (author), Hamdioui, S. (author)
The research and prototyping of new memory technologies are getting a lot of attention in order to enable new (computer) architectures and provide new opportunities for today’s and future applications. Delivering high quality and reliability products was and will remain a crucial step in the introduction of new technologies. Therefore,...
journal article 2019