Stability, geometry and electronic properties of BH_n (n = 0 to 3) radicals on the Si{0 0 1}3 1:H surface from first-principles

A new generation of radiation detectors relies on the crystalline Si and amorphous B (c-Si/a-B) junctions that are prepared through chemical vapor deposition of diborane (B₂H₆) on Si at low temperature (∼400 C). The Si wafer surface is dominated by the Si{0 0 1}3 1 domains that consist of two different Si species at low...