Vertical SiC taper with a small angle fabricated by slope transfer method

In this Letter, a slope transfer method to fabricate vertical waveguide couplers is proposed. This method utilises wet etched Si as a mask, and takes advantage of dry etching selectivity between Si and SiC, to successfully transfer the profile from the Si master into SiC. By adopting this method, a <2° slope is achieved. Such a taper can...

A scattering model for surface-textured thin films

We present a mathematical model that relates the surface morphology of randomly surface-textured thin films with the intensity distribution of scattered light. The model is based on the first order Born approximation [see e.g., M. Born and E. Wolf, Principles of Optics, 7th ed. (Cambridge University Press, Cambridge, England, 1999) ] and on...

Electronic coupling of colloidal CdSe nanocrystals monitored by thin-film positron-electron momentum density methods

The effect of temperature controlled annealing on the confined valence electron states in CdSe nanocrystal arrays, deposited as thin films, was studied using two-dimensional angular correlation of annihilation radiation. A reduction in the intensity by ?35% was observed in a feature of the positron annihilation spectrum upon removal of the...

Transmission measurement of the photonic band gap of GaN photonic crystal slabs

A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time domain simulations gives quantitative agreement...

Location of lanthanide impurity levels in the III-V semiconductor GaN

Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...

Evaluation of an Empirical Model to Estimate and Optimize Mechanical Properties of PECVD SiC Films

In this paper, we present a systematic investigation of the influence of the deposition parameters on the deposition rate, etch rate, and mechanical stress of SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. Among the relevant deposition parameters, the SiH4 gas flow rate, the main parameter to determine the Si...