Inductively coupled plasma reactive ion etching of high aspect ratio structures on 4H-SiC for MEMS applications

As silicon carbide(SiC) gets more and more attention from the semiconductor industry due to its robust mechanical and chemical properties, reliable and standardized processing technologies such as reactive ion etching(RIE) for SiC are in great demand. This is because of the difficulty and challenge of fabricating micro devices on the SiC...