Searched for: +
(1 - 9 of 9)
document
Zheng, T. (author), Guo, Licheng (author), Sun, Ruijian (author), Wang, Tongtong (author), Hong, Changqing (author), Benedictus, R. (author), Pascoe, J.A. (author)
In this paper, the effect of interface properties on the compressive failure behavior of 3D woven composites (3DWC) is investigated by incorporating a micromechanics-based multiscale damage model (MMDM). The correlation between the mesoscopic stress of yarns and microscopic stress of constituents is established by defining a stress...
journal article 2023
document
Mao, Pengcheng (author), Fan, Huilin (author), Liu, Chang (author), Lan, Gongxu (author), Huang, Wei (author), Li, Zhipeng (author), Amin Hassan, H.M. (author), Zheng, Runguo (author), Wang, Zhiyuan (author), Sun, Hongyu (author), Liu, Yanguo (author)
Thanks to the low cost and earth's abundant potassium resources, potassium ion batteries (PIBs) have attracted much interest as alternative energy storage devices. However, there is still a great challenge to develop suitable anode materials for PIBs with high specific capacity, fast charge/discharge and stable ion storage. Nowadays,...
journal article 2022
document
van Eeden, E.A.M. (author), Gao, Y. (author), Liu, Y. (author), Sun, Y. (author), Qi, K. (author), Zheng, Y. (author)
This graduation studio explores the potential of a landscape-based regional design approach to contribute to more resilient coastal landscapes around the globe. Such an approach addresses the interaction between the natural and urban landscape throughout the scales of space and time. It takes the landscape as the basis for sustainable urban...
report 2021
document
Sun, Y. (author), Kang, Xuanwu (author), Deng, Shixiong (author), Zheng, Yingkui (author), Wei, Ke (author), Xu, Linwang (author), Wu, Hao (author), Liu, Xinyu (author)
Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a...
journal article 2021
document
Kang, Xuanwu (author), Sun, Y. (author), Zheng, Yingkui (author), Wei, Ke (author), Wu, Hao (author), Zhao, Yuanyuan (author), Liu, Xinyu (author), Zhang, Kouchi (author)
In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON...
journal article 2021
document
Sun, Y. (author), Kang, Xuanwu (author), Deng, Shixiong (author), Zheng, Yingkui (author), Wei, Ke (author), Xu, Linwang (author), Wu, Hao (author), Liu, Xinyu (author)
We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and...
journal article 2021
document
Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Wei, Ke (author), Li, Pengfei (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...
journal article 2020
document
Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Lu, Jiang (author), Tian, Xiaoli (author), Wei, Ke (author), Wu, Hao (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...
review 2019
document
Ge, W. (author), Jiao, Yutie (author), Sun, Heqiang (author), Li, Zongkun (author), Zhang, Hexiang (author), Zheng, Yan (author), Guo, Xinyan (author), Zhang, Zhaosheng (author), van Gelder, P.H.A.J.M. (author)
Dam breach has catastrophic consequences for human lives and economy. In previous studies, empirical models are often, to a limited extent, due to the inadequacy of historical dam breach events. Physical models, which focus on simulating human behavior during floods, are not suitable for fast analysis of a large number of dams due to the...
journal article 2019
Searched for: +
(1 - 9 of 9)