Liu, Ke (author), Tan, C. (author), Li, Shizhen (author), Yuan, Wucheng (author), Liu, X. (author), Zhang, Kouchi (author), French, P.J. (author), Ye, H. (author), Wang, S. (author) This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping...
journal article 2023
