Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author) We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO<sub>3</sub>) nano-film modified gate for nitrogen dioxide (NO<sub>2</sub>) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the...
journal article 2019
