Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source

High critical current-density (10?to?420?kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10?3–10?1?mbar. We find a much better reproducibility and control compared to previous...

Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate

The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800?°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4...