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Zheng, T. (author), Guo, Licheng (author), Sun, Ruijian (author), Wang, Tongtong (author), Hong, Changqing (author), Benedictus, R. (author), Pascoe, J.A. (author)In this paper, the effect of interface properties on the compressive failure behavior of 3D woven composites (3DWC) is investigated by incorporating a micromechanics-based multiscale damage model (MMDM). The correlation between the mesoscopic stress of yarns and microscopic stress of constituents is established by defining a stress...journal article 2023
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Mao, Pengcheng (author), Fan, Huilin (author), Liu, Chang (author), Lan, Gongxu (author), Huang, Wei (author), Li, Zhipeng (author), Amin Hassan, H.M. (author), Zheng, Runguo (author), Wang, Zhiyuan (author), Sun, Hongyu (author), Liu, Yanguo (author)Thanks to the low cost and earth's abundant potassium resources, potassium ion batteries (PIBs) have attracted much interest as alternative energy storage devices. However, there is still a great challenge to develop suitable anode materials for PIBs with high specific capacity, fast charge/discharge and stable ion storage. Nowadays,...journal article 2022
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Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Wei, Ke (author), Li, Pengfei (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...journal article 2020
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Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Lu, Jiang (author), Tian, Xiaoli (author), Wei, Ke (author), Wu, Hao (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author)Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...review 2019