X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...

X-ray diffraction study of the composition and strain fields in buried SiGe islands

We report on studies of strain and composition of two-dimensionally ordered SiGe islands grown by molecular beam epitaxy using high resolution x-ray diffraction. To ensure a small size distribution of the islands, pit-patterned 4 (001) Si wafers were used as substrates. The Si wafers were patterned by optical lithography and reactive ion etching...