Impact of high temperature H₂ pre-treatment on Pt-AlGaN/GaN HEMT sensor for H₂S detection

In this paper, a method to extend the detection range of hydrogen sulfide (H₂S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H₂S exposure in dry air. A pre...

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H₂S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

The authors report the results of investigating two models for ion-beam-induced deposition (IBID). These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the energy spectra of the secondary electrons were...

Proximity effect in ion-beam-induced deposition of nanopillars

Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....

Pt-Ce-soot generated from fuel-borne catalysts: Soot oxidation mechanism

Electrical transport in monolayers of phthalocyanine molecular wires and AFM imaging of a single wire bridging two electrodes