Investigating Mechanical Properties of Silicon Carbide Coated Carbon Nanotube Composite at Elevated Temperatures

Silicon carbide (SiC) coated vertically aligned carbon nanotubes (VACNT) are attractive material for fabricating MEMS devices as an alternative for bulk micromachining of SiC. In order to examine the mechanical properties of SiC-CNT composites at high temperatures, we fabricated VACNT micro-pillars with different amounts of SiC coating and...

Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide...

Electromigration-induced local dewetting in Cu films

The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the electromigration test was first found and investigated. When...

Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of...

Silicon carbide reinforced vertically aligned carbon nanotube composite for harsh environment mems

Fabricating high-aspect-ratio (HAR) structures with silicon carbide (SiC) is a challenging task. This paper presents a silicon carbide (SiC) reinforced vertically aligned carbon nanotubes (VACNT) composite as a promising candidate to fabricate HAR MEMS devices for harsh environment applications. The use of a VACNT array allows the fast...

Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology

The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively...

Patterning of fine-features in nanoporous films synthesized by spark ablation

Advances in semiconductor device manufacturing technologies are enabled by the development and application of novel materials. Especially one class of materials, nanoporous films, became building blocks for a broad range of applications, such as gas sensors and interconnects. Therefore, a versatile fabrication technology is needed to...

ZnO Nanoparticle Printing for UV Sensor Fabrication

In this work, a novel microfabrication-compatible production process is demonstrated and used to fabricate UV photoresistors made from ZnO nanoparticles. It comprises a simple room-temperature production method for synthesizing and direct-writing nanoparticles. The method can be used on a wide range of surfaces and print a wide range of...

Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

High Step Coverage Interconnects By Printed Nanoparticles

The growing diversity in the used materials in semiconductor packaging provides challenges for achieving good interconnection. Particularly the very soft substrates, such as paper and polymers, and very hard, such as silicon carbide, offer unique challenges to wire-bonding or formation of vertical interconnects. Complementary technologies are...

Towards a Scalable Sun Position Sensor with Monolithic Integration of the 3d Optics for Miniaturized Satellite Attitude Control

In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position sensor platform is implemented in a seven mask BICMOS technology with...

Wafer Level Through Polymer Optical Vias (TPOV) Enabling High Throughput of Optical Windows Manufacturing

This article shows the fabrication process and packaging of through polymer optical vias (TPOV). The TPOV enables encapsulation and packaging of silicon photonic systems using film assisted molding (FAM) and the creation of micron-sized through polymer optical vias. The optical vias are lithographically defined in thick film photo-resist (∼ 300...