Lee, Kookjin (author), Choi, Junhee (author), Kaczer, Ben (author), Grill, Alexander (author), Lee, Jae Woo (author), Van Beek, Simon (author), Lee, Jaewoo (author), Shin, D. (author), Lee, S. (author) In this study, high-performance few-layered ReS<sub>2</sub> field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS<sub>2</sub> FET having a trade-off of performance parameters is optimized using a compact model from analytical...
journal article 2021
