Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping...

High-Performance Flexible Strain Sensor Fabricated Using Laser Transmission Pyrolysis

In recent years, metal crack-based stretchable flexible strain sensors have attracted significant attention in wearable device applications due to their extremely high sensitivity. However, the tradeoff between sensitivity and detection range has been an intractable dilemma, severely limiting their practical applications. Herein, we propose a...

Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...

Assembly of Core/Shell Nanospheres of Amorphous Hemin/Acetone-Derived Carbonized Polymer with Graphene Nanosheets for Room-Temperature NO Sensing

Implementing parts per billion-level nitric oxide (NO) sensing at room temperature (RT) is still in extreme demand for monitoring inflammatory respiratory diseases. Herein, we have prepared a kind of core-shell structural Hemin-based nanospheres (Abbr.: Hemin-nanospheres, defined as HNSs) with the core of amorphous Hemin and the shell of...