Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using...

A 76.5-92.6 GHz CMOS LNA Using Two-Port kQ-Product Theory for Transformer Design

This letter presents a convenient approach based on the two-port kQ-product theory to analyze the influence of interwinding capacitive coupling on the efficiency of the transformer. It is demonstrated that a transformer with proper size can benefit from the interwinding capacitive coupling to maximize its efficiency at a desired frequency....