Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications

This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of...

Low Temperature Sapphire to Silicon Flip Chip Interconnects by Copper Nanoparticle Sintering

The continuous trend to integrate more multi-functions in a package often involves, Heterogeneous Integration of multi-functional blocks in some kind of 3D stacking. The conventional flip chip for die-on-substrate technology applies solder for integration. However, solder joint integration has the disadvantages of restricting height, reflow...

ZnO Nanoparticle Printing for UV Sensor Fabrication

In this work, a novel microfabrication-compatible production process is demonstrated and used to fabricate UV photoresistors made from ZnO nanoparticles. It comprises a simple room-temperature production method for synthesizing and direct-writing nanoparticles. The method can be used on a wide range of surfaces and print a wide range of...

Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

High Step Coverage Interconnects By Printed Nanoparticles

The growing diversity in the used materials in semiconductor packaging provides challenges for achieving good interconnection. Particularly the very soft substrates, such as paper and polymers, and very hard, such as silicon carbide, offer unique challenges to wire-bonding or formation of vertical interconnects. Complementary technologies are...

Towards a Scalable Sun Position Sensor with Monolithic Integration of the 3d Optics for Miniaturized Satellite Attitude Control

In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position sensor platform is implemented in a seven mask BICMOS technology with...