Hrauda, N. (author), Zhang, J.J. (author), Stoffel, M. (author), Stangl, J. (author), Bauer, G. (author), Rehman-Khan, A. (author), Holy, V. (author), Schmidt, O.G. (author), Jovanovic, V. (author), Nanver, L.K. (author) We report on studies of strain and composition of two-dimensionally ordered SiGe islands grown by molecular beam epitaxy using high resolution x-ray diffraction. To ensure a small size distribution of the islands, pit-patterned 4 (001) Si wafers were used as substrates. The Si wafers were patterned by optical lithography and reactive ion etching...
journal article 2009
