Fabrication of Nanoslits with <111> Etching TSWE Method

In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by &lt;111&gt; crystal plane etching. The etching rate of the &lt;111&gt; crystal plane is reasonably slow as it is only 1/45 of the &lt;100&gt; etching rate, thus allowing and...

Correction: Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method (Microsystems & Nanoengineering, (2023), 9, 1, (63), 10.1038/s41378-023-00532-0)

Correction to: Microsystems &amp; Nanoengineering published online 16 May 2023 Correction Following publication of the original article¹, it was noticed that the phrase ‘DNA sequencing’ is incorrect, which should be replaced by ‘biosensing’. The original paper has been updated.

Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method

The application of single-crystal silicon (SCS) nanopore structures in single-molecule-based analytical devices is an emerging approach for the separation and analysis of nanoparticles. The key challenge is to fabricate individual SCS nanopores with precise sizes in a controllable and reproducible way. This paper introduces a fast-stop ionic...