Design, fabrication and characterizations of AlGaN/GaN heterostructure sensors

The microelectronics industry, next to the powerful, continuously scaling of integrated circuits, is currently evolving in the diversification of integrated functions, generally referred to as more than Moore (MtM). MtM concerns all technologies enabling microsystems to be elevated to a higher integration level, and with small package size,...

Impact of high temperature H₂ pre-treatment on Pt-AlGaN/GaN HEMT sensor for H₂S detection

In this paper, a method to extend the detection range of hydrogen sulfide (H₂S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H₂S exposure in dry air. A pre...

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H₂S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...